MJD122 mjd127 complementary silicon power darlington transistors n stmicroelectronics preferred salestypes n low base-drive requirements n integrated antiparallel collector- emitter diode n surface-mounting to-252 (dpak) power package in tape & reel (suffix ot4o) n electrical similar to tip122 and tip127 applications n general purpose switching and amplifier. description the MJD122 and mjd127 form complementary npn - pnp pairs. they are manufactured using epitaxial base technology for cost-effective performance. ? internal schematic diagram january 1999 absolute maximum ratings symbol parameter value unit npn MJD122 pnp mjd127 v cbo collector-base voltage (i e =0) 100 v v ceo collector-emitter voltage (i b =0) 100 v v ebo emitter-base voltage (i c =0) 5 v i c collector current 5 a i cm collector peak current 8 a i b base current 100 ma p tot total dissipation at t case 25 o c 20 w t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c for pnp types voltage and current values are negative. 1 3 dpak to-252 (suffix ot4o) r 1 typ. = 10 k w r 2 typ. = 150 w 1/6
thermal data r thj-case r t hj- amb thermal resistance junction-case max thermal resistance junction-ambient max 6.25 100 o c/w o c/w electrical characteristics (t case =25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i cbo collector cut-off current (i e =0) v cb =100v 10 m a i ceo collector cut-off current (i b =0) v ce =50v 10 m a i cex collector cut-off current v ce =100v v be =-1.5v v ce =100v v be =-1.5v t c =125 o c 10 500 m a m a i ebo emitter cut-off current (i c =0) v eb =5v 2 ma v ceo(sus) collector-emitter sustaining voltage i c = 30 ma 100 v v ce(sat) * collector-emitter saturation voltage i c =4a i b =16ma i c =8a i b =80ma 2 4 v v v be(s at) * base-emitter saturation voltage i c =8a i b =80ma 4.5 v v be(on) * base-emitter voltage i c =4a v ce =4v 2.8 v h fe * dc current gain i c =4a v ce =4v i c =8a v ce =4v 1000 100 12000 * pulsed: pulse duration = 300 m s, duty cycle 2% for pnp type voltage and current values are negative. safe operating area derating curve MJD122 mjd127 2/6
dc current gain (npn type) collector emitter saturation voltage (npn type) base emitter saturation voltage (npn type) dc current gain (pnp type) collector emitter saturation voltage (pnp type) base emitter saturation voltage (pnp type) MJD122 mjd127 3/6
base emitter on voltage (npn type) freewheel diode forward voltage (npn type) base emitter on voltage (pnp type) freewheel diode forward voltage (pnp type) switching time resistive load (npn type) switching time resistive load (pnp type) MJD122 mjd127 4/6
dim. mm inch min. typ. max. min. typ. max. a 2.2 2.4 0.086 0.094 a1 0.9 1.1 0.035 0.043 a2 0.03 0.23 0.001 0.009 b 0.64 0.9 0.025 0.035 b2 5.2 5.4 0.204 0.212 c 0.45 0.6 0.017 0.023 c2 0.48 0.6 0.019 0.023 d 6 6.2 0.236 0.244 e 6.4 6.6 0.252 0.260 g 4.4 4.6 0.173 0.181 h 9.35 10.1 0.368 0.397 l2 0.8 0.031 l4 0.6 1 0.023 0.039 == d l2 l4 13 == b e == b2 g 2 a c2 c h a1 detail oao a2 detail oao to-252 (dpak) mechanical data 0068772-b MJD122 mjd127 5/6
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specification mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics ? 1998 stmicroelectronics printed in italy all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - france - germany - italy - japan - korea - malaysia - malta - mexico - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a. http://www.st.com . MJD122 mjd127 6/6
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